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| inchange semiconductor product specification silicon npn power transistors 2SD2499 description ? with to-3p(h)is package ? high voltage;high speed ? low saturation voltage ? bult-in damper diode applications ? horizontal deflection output for color tv pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v v ebo emitter-base voltage open collector 5 v i c collector current 6 a i cm collector current-peak 12 a i b base current 3 a p c total power dissipation t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3p(h)is) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2499 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i c =400ma ;i b =0 5 v v cesat collector-emitter saturation voltage i c =4a; i b =0.8a 5 v v besat base-emitter saturation voltage i c =4a; i b =0.8a 1.05 1.3 v i cbo collector cut-off current v cb =1500v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 67 200 ma h fe-1 dc current gain i c =1a ; v ce =5v 8 25 h fe-2 dc current gain i c =4a ; v ce =5v 5 9 v f diode forward voltage i f =6a 1.6 2.0 v c ob collector output capacitance i e =0 ; v cb =10v,f=1mhz 95 pf f t transition frequency i c =0.1a ; v ce =10v 2 mhz switching times : t s storage time 7.5 11 | s t f fall time i cp =4a;i b1 =0.8a f h =15.75khz 0.3 0.6 | s inchange semiconductor product specification 3 silicon npn power transistors 2SD2499 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.20 mm) inchange semiconductor product specification 4 silicon npn power transistors 2SD2499 |
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